Referenced Items are not available for this document.
This paper presents a simple-to-implement, semi-empirical model for circuit-level simulation of the MOS breakdown region, with application in ESD-protection circuit design. A new formulation for the multiplicative factor M, used to model avalanche current generation, shows good convergence properties when used in circuit simulators. The effects of source/drain series resistance, substrate resistance, and the parameters of the new M expression are described. We describe how to calibrate the parameters for an NMOS device. Finally, we compare the simulated results with experimental data.
Published in:
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Date of Conference: 8-10 Sept. 1997
- Page(s):
- 161 - 164
- Meeting Date :
- 08 Sep 1997-10 Sep 1997
- Print ISBN:
- 0-7803-3775-1
- INSPEC Accession Number:
- 5766725
- Conference Location :
- Cambridge, MA, USA
- Digital Object Identifier :
- 10.1109/SISPAD.1997.621362
- Product Type:
- Conference Publications
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