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Simulation of reverse short channel effects with a consistent point-defect diffusion model

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5 Author(s)
Sakamoto, H. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Kumashiro, S. ; Hiroi, M. ; Hane, M.
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A consistent point-defect diffusion model including the impurity clustering was implemented, and the reverse short channel effect (RSCE) strength of the nMOSFETs was compared with the pMOSFETs using a common model parameter set. As the result of simulations for typical single-drain MOSFETs, the RSCE was calculated in the nMOSFETs but not in the pMOSFETs. The reason of this RSCE difference is that in the nMOSFETs the interstitials are generated during the arsenic (As) clustering process in the source/drain (S/D) region, but in the pMOSFETs the interstitials are absorbed during the boron (B) clustering process. It is clarified that this interstitial generation or absorption plays a significant role in the difference of the RSCE between nMOSFETs and pMOSFETs.

Published in:

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Date of Conference:

8-10 Sept. 1997