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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f_{T} of 370 GHz

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16 Author(s)
Yuanzheng Yue ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA ; Zongyang Hu ; Jia Guo ; Sensale-Rodriguez, B.
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We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (fT) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (gm.ext) of 650 mS/mm and an on/off current ratio of 106 owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Ω·mm. Delay analysis suggests that the high fT is a result of low gate-drain parasitics associated with the rectangular gate. Although it appears possible to reach 500-GHz fT by further reducing the gate length, it is imperative to investigate alternative structures that offer higher mobility/velocity while keeping the best possible electrostatic control in ultrascaled geometry.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )

Date of Publication:

July 2012

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