By Topic

CMP profile simulation using an elastic model based on nonlinear contact analysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yoo-Hyon Kim ; Semicond. R&D Centre, Samsung Electron. Co. Ltd., Kyungki, South Korea ; Tai-Kyung Kim ; Hoong-Joo Lee ; Jeong-Taek Kong
more authors

Recently, simulation of Chemical Mechanical Polishing (CMP) is becoming more important because planarity and uniformity which are dependent on many dynamic factors are difficult to control. In this paper, a profile simulation environment based on the linear elastic material and nonlinear contact analysis that considers equipment parameters, such as pad hardness, thickness and down pressure is presented. In transient CMP simulation using the elastic model, the contact stress on the wafer surface is the dominant factor in polishing rate during the CMP process. The profiles of CMP simulation agree well with the measured data. This simulation can be used to optimize the CMP process and to generate design rules for filling dummy patterns which are used to improve planarity.

Published in:

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Date of Conference:

8-10 Sept. 1997