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Analysis and study of electrical characteristics of through silicon via in 3D integration

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2 Author(s)
Xiang He ; Coll. of Electron. & Inf. Eng., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China ; Qunsheng Cao

Since through silicon vias (TSVs) emerges as the key technology and essential components to enable 3D integration, it is of great importance to explore and investigate its electrical characteristics. In this paper, a 2-tier signal-ground TSV is studied in frequency domain using 3D full wave field solver. The impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details.

Published in:

High Speed Intelligent Communication Forum (HSIC), 2012 4th International

Date of Conference:

10-11 May 2012