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TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device

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1 Author(s)
Hua Cui ; DuPont/EKC Technol., DuPont Electron. Technol., Hayward, CA, USA

Formulations with TiN/Cu etch rate selectivity greater than 60 at 40°C for TiN pullback and 200 at 55°C for complete TiN mask removal, respectively, have been developed. The formulations are compatible with Cu, low-k and SiON materials, and prevent Cu re-oxidation.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Date of Conference:

15-17 May 2012