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Identifying systematic critical features using silicon diagnosis data

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3 Author(s)
Schuermyer, Chris ; Silicon Test Solutions, Mentor Graphics Corp., Wilsonville, OR, USA ; Malik, S. ; Herrmann, T.

A production worthy methodology has been outlined that uses layout aware scan diagnosis data to validate whether certain topologies are design-process induced defects. The methodology uses pattern matching technology to generate a set of critical feature hypotheses and uses diagnosis-driven yield analysis to validate or refute the hypotheses. The methodology is demonstrated in a 28nm GLOBALFOUNDRIES yield ramp to uniquely identify systematic critical features in silicon and provide a best description of the surrounding topology which induces the defect, along with quantifying the yield impact.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Date of Conference:

15-17 May 2012