Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Application of atmospheric pressure micro-thermal-plasma-jet to ultra rapid thermal annealing for semiconductor device fabrication

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Higashi, S. ; Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

We have developed a high-power-density micro-thermal-plasma-jet (μ-TPJ) to achieve ultra-rapid thermal annealing. Microsecond annealing was performed by μ-TPJ irradiation to an As-implanted Si wafer to form an ultra-shallow junction (USJ). The μ-TPJ could anneal the Si wafer surface at a temperature as high as 920 K for 340 μs. By reducing the annealing duration (ta) from 1.2 ms to 340 μs, the sheet resistance (RS) of the As2+-implanted Si wafer decreased from 1520 to 1287 Ω/sq. In addition, the chemical bond states of As at the very surface were measured by X-ray photoelectron spectroscopy (XPS) and the fraction of activated As was estimated to be ~15% larger than that in the case of millisecond annealing. Surface As atoms in Si wafers were more efficiently activated by a microsecond annealing than a millisecond annealing owing to the suppression of diffusion and clustering.

Published in:

Junction Technology (IWJT), 2012 12th International Workshop on

Date of Conference:

14-15 May 2012