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We compared BF2, In, Ga, C+Ga and In+BF2 dopant species for nMOS HALO at 22nm node for planar bulk & PD-SOI or for FD-SOI ground plane back-gate doping which require steep retrograde dopant profile and good dopant activation using a 1200°C Flash + 900°C 10 sec RTA anneal sequence. The best results were with the C+Ga co-implant realizing a steep surface dopant profile and dopant activation in the 2-3E18/cm3 level. In dopant activation was limited to 3-7E13/cm3 due to low solid solubility limit from the 900°C RTA anneal. The BF2, In+BF2 and Ga implant conditions all showed flat to increasing dopant profile pile-up at the surface which is not desirable.