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InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

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2 Author(s)
Toledo, N.G. ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA ; Mishra, Umesh K.

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The use of InGaN photovoltaic devices as a top cell in a tandem solar cell has the potential to improve the power conversion efficiency of multi-junction devices. The effects of the InGaN top cell’s external quantum efficiency, voltage offset, and fill factor on the integrated III-nitride/non-III-nitride solar cell’s power conversion efficiency are presented. The results are summarized into the III-nitride device parameter requirements for top cell applications. The minimum acceptable area ratio between the III-nitride and non-III-nitride subcells in a 3- or 4-terminal device is also determined.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 11 )