Cart (Loading....) | Create Account
Close category search window
 

Area and reliability efficient ECC scheme for 3D RAMs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Li-Jung Chang ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Yu-Jen Huang ; Jin-Fu Li

Soft error is one critical issue faced by nano-scale random access memories (RAMs). Three-dimensional (3D) RAM with through-silicon via (TSV) is a new approach for overcoming the memory wall. A 3D RAM consists of multiple dies vertically stacked. Therefore, the upper die provides the shielding effect for the lower die. Thus, the SER in the upper die is higher than that in the lower die. This paper proposes an area and reliability efficient ECC (ARE-ECC) scheme for 3D RAMs by taking advantage of the shielding effect. An area and reliability optimization algorithm is also proposed to aid the designer to design the ARE-ECC scheme for 3D RAMs. Simulation results show that the ARE-ECC scheme can effectively increase the reliability of a 3D RAM using small area overhead.

Published in:

VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on

Date of Conference:

23-25 April 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.