By Topic

Thermal and Mechanical Considerations for Silicon-Resin High-Density Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Smith, B. ; Draper Lab., Cambridge, MA, USA ; Kwok, P. ; Thompson, J. ; Mueller, A.
more authors

We examine the thermomechanical tradeoffs in a novel technology for high-density interconnect substrates. Fabricated from silicon (Si) wafers with planar cavities of highly filled composite encapsulant, the technology leverages established Si photolithography but offers improved mechanical properties. Modules are subject to thermomechanical stress during encapsulant cure, assembly reflow, module fabrication, and operation. We show that improvements in junction-to-ambient sinking offset the heat density increase in such systems and low expansion encapsulants prevent failure during cure and subsequent processing. We employ finite element modeling and materials testing to show the effect of wafer design and material selection on the in-plane and through-plane stresses in the module.

Published in:

Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:2 ,  Issue: 7 )