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The influence of the interposed refractory metal layer on the properties of the TiSi/sub 2/ formed is studied. The substrates used were either polycrystalline or monocrystalline Si. Three different metal depositions were done, one with only 60 nm Ti, the two others with 60 nm Ti on top of a 0.5 nm thick Mo or Ta layer. A rapid thermal anneal in N/sub 2/ was carried out for the silicide formation. Very smooth TiSi/sub 2/ films with sharp TiSi/sub 2//Si interface were obtained with the interposed layer.