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Advances in the formation of C54-TiSi2 with an interposed refractory metal layer: some properties

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4 Author(s)
A. Mouroux ; KTH-Electron. Solid State Electron., Kista, Sweden ; W. Kaplan ; Shi-Li Zhang ; S. Peterson

The influence of the interposed refractory metal layer on the properties of the TiSi/sub 2/ formed is studied. The substrates used were either polycrystalline or monocrystalline Si. Three different metal depositions were done, one with only 60 nm Ti, the two others with 60 nm Ti on top of a 0.5 nm thick Mo or Ta layer. A rapid thermal anneal in N/sub 2/ was carried out for the silicide formation. Very smooth TiSi/sub 2/ films with sharp TiSi/sub 2//Si interface were obtained with the interposed layer.

Published in:

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Date of Conference:

16-19 March 1997