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Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers

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1 Author(s)
Agrawal, G.P. ; Inst. of Opt., Rochester Univ., NY, USA

The finite intraband relaxation time in semiconductor lasers leads to gain saturation at high laser powers. The nonperturbative solution of the single-mode density-matrix equations shows that both the optical gain and the refractive index become intensity dependent as a result of intraband relaxation dynamics. Gain and index nonlinearities are included in the rate equations, and how the modulation response and noise characteristics of semiconductor lasers are affected by such nonlinearities is studied. The intensity dependence of the frequency and the damping rate of relaxation oscillations leads to a fundamental limit imposed on the small-signal modulation bandwidth; the analysis provides an expression for the ultimate modulation bandwidth in terms of the material parameters

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 11 )

Date of Publication:

Nov 1990

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