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Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

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7 Author(s)
Pengyu Wang ; State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), 100876, China ; Qi Wang ; Xin Guo ; Zhigang Jia
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We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.

Published in:

Communications and Photonics Conference and Exhibition, 2011. ACP. Asia

Date of Conference:

13-16 Nov. 2011