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Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.