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Noise characterization of a mode-locked InGaAsP semiconductor diode laser

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4 Author(s)
Burns, D. ; Dept. of Phys. & Astron., St. Andrews Univ., UK ; Finch, A. ; Sleat, W. ; Sibbett, W.

Noise measurements were made on an InGaAsP semiconductor diode laser by monitoring and analyzing the mode-locked pulse train power spectrum. The noise content of the mode-locking RF source was observed to be transferred directly to the laser pulse train and, thus, careful selection of the drive oscillator is essential. Amplification of the laser pulses by an erbium-fiber amplifier did not lead to any increase in timing jitter and the additional amplitude noise present could be removed by using a more compatible pump source such as a diode laser operating at either 980 or 1490 nm

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Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 11 )