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High-Responsivity Solar-Blind Photodetector Based on  \hbox {Mg}_{0.46}\hbox {Zn}_{0.54}\hbox {O} Thin Film

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6 Author(s)
Qinghong Zheng ; Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China ; Feng Huang ; Jin Huang ; Qichan Hu
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Adopting relatively high substrate temperature and low growth rate, single-phase wurtzite Mg0.46Zn0.54O film is grown on a quartz substrate by homemade magnetron sputtering. Solar-blind photodetector is fabricated based on the MgZnO film and shows a peak responsivity of 3.4 A/W at 265 nm with a cutoff wavelength of 280 nm under 10 V. As applied voltage increased to 70 V, the peak responsivity is up to 31.1 A/W corresponding to an internal gain of 148 times. The large internal gain was attributed to the trapping of photoionized holes at Ev + 282 meV deep level through deep-level transient spectral measurement.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )