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Power saturation in 2-1 Y-junction diode lasers

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4 Author(s)
van der Poel, C.J. ; Philips Res. Lab., Eindhoven, Netherlands ; Opschoor, J. ; Reinhoudt, C.J. ; Drenten, R.R.

An experimental and theoretical study of 2-1 Y-junction semiconductor lasers is presented. In a V-channeled substrate inner stripe laser (VSIS)-type antireflection coated 2-1 Y-junction array lasing at a wavelength of 780 nm, stable in-phase operation is observed up to a CW output power of 100 mW. In uncoated devices, saturation effects occur which limit stable in-phase operation to low-power output. The experimental results are discussed in the framework of a model based on the beam propagation method

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Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 11 )