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Systematical investigation and physical mechanism of HfO2 gate stacks band alignment, VFB shift and Fermi level pinning

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9 Author(s)
X. L. Wang ; Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China ; W. W. Wang ; K. Han ; J. Zhang
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Band alignment of TiN/HfO2/SiO2/Si stack is systematically investigated by X-ray photoelectron spectroscopy. The differences of Si 2p binding energies between SiO2 and Si substrate are experimentally found to decrease with the sequence of SiO2/Si, 4 nm HfO2/SiO2/Si and 2 nm HfO2/SiO2/Si stacks. The p-type Schottky barrier heights at TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack are experimentally estimated to increase with thicker HfO2 thickness. A physical model based on band alignment of TiN/HfO2/SiO2/Si stack is employed to successfully explain these experimental results. The positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are also physically demonstrated by this model and attributed to interface induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.

Published in:

Proceedings of Technical Program of 2012 VLSI Technology, System and Application

Date of Conference:

23-25 April 2012