By Topic

Enhanced I/sub c/-B performance in Tl-base high-Te oxides prepared by a diffusion process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tachikana, K. ; Fac. of Eng., Tokai Univ., Kanagawa, Japan ; Kikuchi, A. ; Nakamura, T.

High-T/sub c/ Tl-base oxides can be synthesized by a diffusion reaction within a short reaction time. The F addition apparently promotes the phase transformation from 2223 to 1223. The scanning electron microscope observation reveals that the 1223 phase formed by the F addition shows a dense and homogeneous structure, resulting in an increase in transport I/sub c/ at 77 K. Moreover, F addition significantly improves the I/sub c/ at 77 K under magnetic field, and shifts the irreversibility line to higher temperature. Meanwhile, V addition was found to enhance the diffusion reaction, resulting in the formation of 2223 layer of about 600 pm in thickness after the reaction at 850/spl deg/C for 2 h. The V is pushed out from the diffusion layer and accumulates on the surface of the specimen. The V addition causes almost no degradation in T/sub c/. I/sub c/-B performance is appreciably improved by annealing in O/sub 2/ after the reaction.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:7 ,  Issue: 2 )