By Topic

Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jain, N. ; Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA ; Bansal, Tanesh ; Durcan, C. ; Bin Yu

We demonstrated graphene interconnects on layered insulator-hexagonal boron nitride ( h-BN). Performance metrics are compared among three material systems: CVD graphene on h-BN, CVD graphene on SiO2, and exfoliated graphene on SiO2. CVD graphene on h-BN shows approximately 19 times and 8 times improved conductivity as compared with CVD graphene on SiO2 and exfoliated graphene on SiO2, respectively. For graphene on h-BN, an ultrahigh carrier mobility (~ 15 000 cm2/V·s at a carrier density of 1 × 1012 cm-2) is observed. The breakdown power density is much increased, attributed to the higher thermal conductivity of h-BN (than that of SiO2) that facilitates heat dissipation. Electrical annealing reduces graphene sheet resistance. Unlike the case for SiO2 substrate, the absence of positive shift of Dirac point could be due to the interface-state-free nature of h-BN substrate. The research suggests that h-BN could be used as an alternative substrate material for graphene-based interconnects, overcoming performance limit and reliability issues caused by the SiO2 substrate.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )