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An in situ technique based on diffuse reflectance spectroscopy to measure the thickness and temperature of CdTe films grown by molecular beam epitaxy on GaAs substrates is studied in this paper. A new model considering the interference of a thin film is set up to correct the previous errors observed in temperature measurements. A precise thickness parameter can be acquired by fitting the curves of the diffuse reflectance spectrum. This correction procedure is verified at the growth temperature of CdTe, which shows a nonoscillation result of the band edge thermometry. Compared with the thickness measured by an ex situ IR transmission spectrum, the thickness determined by using this model has an accuracy of less than 0.01 μm. This measurement can be used for precise in situ noncontact precise monitoring of growth temperature and thickness.