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Molecular dynamics (MD) simulations based on the Tersoff potential have been developed to study the laser-induced crystallization of amorphous silicon (a-Si) film with ultrathin thickness to form size-controllable Si nano-dots. The influences of laser fluence and a-Si film thickness on the crystallization process were discussed. Classic nucleation theory was used to explain the results of the MD simulations. The constrain effect of a-Si films thickness on the formation of Si nano-dots was evaluated accordingly.