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Dynamical process of KrF pulsed excimer laser crystallization of ultrathin amorphous silicon films to form Si nano-dots

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9 Author(s)
Chen, Guran ; National Laboratory of Solid State Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering and School of Physics, Nanjing University, Nanjing 210093 China ; Xu, Jun ; Xu, Wei ; Sun, Hongcheng
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Molecular dynamics (MD) simulations based on the Tersoff potential have been developed to study the laser-induced crystallization of amorphous silicon (a-Si) film with ultrathin thickness to form size-controllable Si nano-dots. The influences of laser fluence and a-Si film thickness on the crystallization process were discussed. Classic nucleation theory was used to explain the results of the MD simulations. The constrain effect of a-Si films thickness on the formation of Si nano-dots was evaluated accordingly.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 9 )

Date of Publication:

May 2012

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