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This study examines the influence of the defect properties on internal quantum efficiency (IQE) in blue InGaN-based light emitting diodes (LEDs). The defect parameter is introduced for estimating defect properties among defect density, size, and defect type that are strongly correlated with IQE in InGaN LED. The value of IQE can be expressed by the value of the defect parameter, which was obtained from transmission electron microscopy and cathodoluminescence measurement.