By Topic

Correlation between defect properties and internal quantum efficiency in blue-emitting InGaN based light emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lee, Sun-Kyun ; LED R&D Center, LED Division, LG Innotek, Paju 413-901, Korea ; Soo Lim, Hyun ; Lee, Jang-Ho ; Kwack, Ho-Sang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This study examines the influence of the defect properties on internal quantum efficiency (IQE) in blue InGaN-based light emitting diodes (LEDs). The defect parameter is introduced for estimating defect properties among defect density, size, and defect type that are strongly correlated with IQE in InGaN LED. The value of IQE can be expressed by the value of the defect parameter, which was obtained from transmission electron microscopy and cathodoluminescence measurement.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 10 )