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High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

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4 Author(s)
Yang, Li ; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA ; Cheng, Cheng-Wei ; Bulsara, Mayank T. ; Fitzgerald, E.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4721328 

In this paper, we demonstrate high electron mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al2O3 (gate dielectric)/ In0.53Ga0.47As-In0.52Al0.48As (barrier)/In0.53Ga0.47As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situ chemical vapor deposition (CVD) Al2O3 displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al2O3, which indicates that CVD process resulted in a lower Al2O3/In0.53Ga0.47As interfacial defect density. A gate bias was applied to the structure with CVD Al2O3, and a peak mobility of 9243 cm2/V s at a carrier density of 2.7 × 1012 cm-2 was demonstrated for the structure with a 4 nm In0.53Ga0.47As-In0.52Al0.48As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In0.53Ga0.47As MOSFET structures.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 10 )

Date of Publication:

May 2012

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