By Topic

Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sasaki, S. ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan ; Suda, J. ; Kimoto, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4720435 

Lattice parameters of high-dose ion-implanted 4H-SiC were investigated with reciprocal space mapping (RSM). N, P, Al, or (C+Si) ions were implanted into lightly doped epilayers to form a (330–520) nm-deep box profile with concentrations of 1019-1020atoms/cm3. After activation annealing at 1800 °C, RSM measurements were conducted. The RSM images for (0008) reflection revealed that high-dose ion implantation causes c-lattice expansion in implanted layers, irrespective of ion species. In addition, crystallographic tilt was observed after high-dose ion implantation. The tilt direction is the same for all the samples investigated; the c-axis of the implanted layers is inclined toward the ascending direction of the off-cut. The c-lattice mismatch and the tilt angle increased as the implantation dose increases, indicating that the implantation damage is responsible for the lattice parameter change. From these results and transmission electron microscopy observation, the authors conclude that the c-lattice mismatch and the crystallographic tilt are mainly caused by secondary defects formed after the ion-implantation and activation-annealing process.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 10 )