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Lutetium-doped EuO films grown by molecular-beam epitaxy

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12 Author(s)
Melville, A. ; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA ; Mairoser, T. ; Schmehl, A. ; Shai, D.E.
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The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

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Applied Physics Letters  (Volume:100 ,  Issue: 22 )