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Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

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8 Author(s)
Mazzeo, G. ; Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via R. Cozzi 53, I-20125 Milano, Italy ; Prati, E. ; Belli, M. ; Leti, G.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4721433 

We report on the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor extracted from the current through the quantum dot as a probe for the donor ionization state. We employ a silicon n-metal-oxide-semiconductor field-effect transistor (MOSFET) with two side gates at a single metallization level to control both the device conductance and the donor charge. The elastic nature of the process is demonstrated by temperature and magnetic field independent tunneling times. The Fano factor approaches 1/2 revealing that the process is sub-poissonian.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 21 )

Date of Publication:

May 2012

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