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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

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6 Author(s)
Hestroffer, K. ; CEA-CNRS Group (Nanophysique et Semiconducteurs), Université Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble, France ; Leclere, C. ; Cantelli, V. ; Bougerol, C.
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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).

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Applied Physics Letters  (Volume:100 ,  Issue: 21 )