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Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

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10 Author(s)
Zheng, Zhiyuan ; State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China ; Chen, Zimin ; Chen, Yingda ; Huang, Shanjin
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We report the anomalous mobility properties of Si-delta-doped GaN with periodically doping profile. Samples with different delta-doping periods or with varied Si source flow were investigated. It is found that for the short delta-doping-period (<26.5 nm) samples, the Hall mobility increases with decreasing electron concentration; while for the longer-doping-period samples, the situation is just the opposite. To interpret this observation, a two-layer model has been built up for long-period samples based on secondary ion mass spectroscopy measurements. The fitting results using this model are well consistent with the experimental data.

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Applied Physics Letters  (Volume:100 ,  Issue: 21 )