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Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes

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7 Author(s)
Su, Zonghui ; Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA ; Huang, Li ; Liu, Fang ; Freedman, Justin P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4718354 

Thermal conductivities (k) of the individual layers of a GaN-based light emitting diode (LED) were measured along [0001] using the 3-omega method from 100-400 K. Base layers of AlN, GaN, and InGaN, grown by organometallic vapor phase epitaxy on SiC, have effective k much lower than bulk values. The 100 nm thick AlN layer has k = 0.93 ± 0.16 W/mK at 300 K, which is suppressed >100 times relative to bulk AlN. Transmission electron microscope images revealed high dislocation densities (4 × 1010 cm-2) within AlN and a severely defective AlN-SiC interface that cause additional phonon scattering. Resultant thermal resistances degrade LED performance and lifetime making layer-by-layer k, a critical design metric for LEDs.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 20 )

Date of Publication:

May 2012

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