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\hbox {HfO}_{2} -Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

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4 Author(s)
Sriraman, V. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Li, Xiang ; Singh, N. ; Sungjoo Lee

In this letter, HfO2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (Ireset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low Ireset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )