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In this letter, HfO2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (Ireset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low Ireset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.