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AlGaN/GaN MISHEMTs With High- \kappa \hbox {LaLuO}_{3} Gate Dielectric

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9 Author(s)
Shu Yang ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Sen Huang ; Hongwei Chen ; Chunhua Zhou
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A high-κ LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high ION/IOFF of 109, a maximum drain current of 820 mA/mm at VGS = 3 V, a peak transconductance (Gm) of ~ 192 mS/mm, and a steep subthreshold slope (SS) of ~ 73 mV/dec.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )