By Topic

Spiral shape CNT on silicon substrate growth control method for on-chip electronic devices applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. A. Abu Qahouq ; Department of Electrical and Computer Engineering, The University of Alabama ; D. L. Carnahan

Carbon nanotubes (CNTs) with their different types have several potential future applications, including on-chip integrated electronic devices. The growth control of CNTs in the desired shape is important to realise such devices. A method to control the growth of CNTs in a desired spiral shape or other similar shapes on silicon (Si) substrates is proposed. Multi-walled carbon nanotube growth in a circular spiral shape is demonstrated by using a trenched-patterned-shape on the Si substrate method. The growth concept, the growth and fabrication steps, and the growth and fabrication results are presented.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 11 )