By Topic

Electromagnetic Interference and Ionizing Radiation Effects on CMOS Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Integrated circuits are inherently complicated and made more by increasing transistor quantity and density. This trend potentially enhances concomitant effects of high-energy ionizing radiation and local or impressed electromagnetic interference (EMI). The reduced margin for signal error may counter any gain in radiation hardness from smaller device dimensions. Isolated EMI and ionizing radiation studies on circuits have been extensively conducted over the past 30 years. However, little focus has been placed on the combined effects. To investigate the effect of combined EMI and ionizing radiation, two complementary metal-oxide-semiconductor inverter technologies (CD4069 and SN74AUC1G04) were analyzed for their static performance in response to both EMI and gamma radiation up to 132 krd(Si). The combined EMI and gamma radiation environment, compared to the isolated effects of each, produced the most severe degradation in inverter performance for both device technologies.

Published in:

Plasma Science, IEEE Transactions on  (Volume:40 ,  Issue: 6 )