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The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor

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5 Author(s)
Woong Hee Jeong ; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea ; Kyung Min Kim ; Dong Lim Kim ; You Seung Rim
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We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350°C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm2/V · s, a high ON/OFF ratio of 9.0 × 106, and a steep subthreshold swing of 0.53 V/dec.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 8 )