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Correlation Between Random Telegraph Noise and  \hbox {1}/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain

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8 Author(s)
Bo Chin Wang ; Institute of Microelectronics, the Department of Electrical Engineering, the Advanced Optoelectronic Technology Center, and the Center for Micro/Nano Science and Technology, National Cheng Kung University , Tainan, Taiwan ; San Lein Wu ; Chien Wei Huang ; Yu Ying Lu
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The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 7 )