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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:7 Help

Size-Dependent-Transport Study of \hbox {In}_{0.53} \hbox {Ga}_{0.47}\hbox {As} Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

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6 Author(s)
Gu, J.J. ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Heng Wu ; Yiqun Liu ; Neal, A.T.
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InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )

Date of Publication: July 2012

Page(s):
967 - 969
ISSN :
0741-3106
INSPEC Accession Number:
12817612
Digital Object Identifier :
10.1109/LED.2012.2194690
Date of Publication :
21 May 2012
Date of Current Version :
22 June 2012
Issue Date :
July 2012
Sponsored by :
IEEE Electron Devices Society

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