By Topic

A novel method to address ILD CMP non-uniformity issue for advanced memory device integration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wei Wei ; Process R&D Dept., Micron Technol., Boise, ID, USA ; McDaniel, I. ; Jindal, A. ; Jia Hui Ng

CMP non-uniformity has been an increasingly critical issue that needs to be addressed as memory device geometries continue to shrink. This issue is more prominent for ILD oxide CMP due to its poor controllability as compared to other CMP processes that can rely on stopping layers for effective endpoint detections and non-uniformity control. In this paper, we propose a novel approach to address the ILD oxide CMP non-uniformity issue by introducing a dual film polish concept. Experimental results show that this approach improves wafer non-uniformity and reduces scratches. Final device probe yield suggests that the approach is valid. A rate model is also proposed to elucidate the dual film CMP process.

Published in:

Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on

Date of Conference:

20-20 April 2012