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Extracting the electromechanical coupling constant of piezoelectric thin film by the high-tone bulk acoustic resonator technique

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6 Author(s)
Chong Zhou ; State Key Lab. of Precision Meas. Technol. & Instrum., Tianjin Univ., Tianjin, China ; Wei Pang ; Qiang Li ; Hongyu Yu
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In this paper, a new approach is proposed to rapidly and accurately measure the electromechanical coupling constant Kt2 of thin film piezoelectric material, which is critically important for real-time quality control of the piezoelectric film growth in mass production. An ideal lossy bulk acoustic resonator (LBAR) model is introduced and the theory behind the method is presented. A high-tone bulk acoustic resonator (HBAR) was fabricated on a silicon wafer. The impedance response of the resonator was measured, from which the Kt2 of the piezoelectric material was extracted. To illustrate the potential of the proposed technique to extract material properties, two HBAR devices employing AlN as the piezoelectric material were fabricated using an RF sputter system with known good and bad deposition conditions; the extracted Kt2 values of the piezoelectric material are compared.

Published in:

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:59 ,  Issue: 5 )

Date of Publication:

May 2012

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