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A New Model for Through-Silicon Vias on 3-D IC Using Conformal Mapping Method

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4 Author(s)
Tai-Yu Cheng ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Chuen-De Wang ; Yih-Peng Chiou ; Tzong-Lin Wu

Based on the conformal mapping technique, a novel macro- π model is proposed to accurately predict the electrical performance of a low pitch-to-diameter ratio (P / D) through-silicon via (TSV) pair on the 3-D IC. The model combines the conventional resistance and inductance (RL) circuit with several parallel capacitances and conductance (CG) circuit. The accuracy-improved CG model rigorously considers the proximity effect. The model can be established by using the derived closed-form formula that is related to geometrical parameters of the TSVs. Compared with the conventional π-type model, the proposed model can significantly reduce the error of CG value from 25% to 2% with respect to a full-wave simulation, and thus the insertion loss can be well predicted from dc to 40 GHz.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 6 )

Date of Publication:

June 2012

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