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A high-efficiency GaN HEMT power amplifier with harmonics treatment up to the fourth order has been developed at the 5.8 GHz band. The harmonics treatment was applied by considering the influence of feedback and shunt capacitance in the GaN HEMT, to reduce the average power consumption in a GaN HEMT including parasitic elements. The fabricated GaN HEMT amplifier delivered a maximum power-added efficiency of 79% and a maximum drain efficiency of 90% at 5.65 GHz, and the saturated output power was 33.3 dBm. This value represents state-of-the-art C-band performance efficiency.