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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

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13 Author(s)
Matsukawa, T. ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan ; Liu, Y. ; O'uchi, S. ; Endo, K.
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ON-current (Ion) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of Ion are successfully extracted as independent contributions of threshold voltage Vt, transconductance Gm, and parasitic resistance Rpara. As well as Vt variability, Gm variation exhibits a linear relationship in the Pelgrom plot. However, the Gm variation is not reduced with scaling the gate dielectric thickness unlike the Vt variation. Perspective for 14-nm FinFETs represents that the Gm variation will be the dominant Ion variation source. A solution to reduce the Gm variation for the FinFET is also proposed.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 8 )