By Topic

A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Honda, Y. ; Dept. of Phys. Electron., Hiroshima Univ., Japan ; Suemune, I. ; Yasuhira, N. ; Yamanishi, M.

A new type of optoelectronic semiconductor device which utilizes the modulation-doped (MOD) heterostructure is demonstrated. The device operates not only as a lateral current injection (LCI) laser but also as a junction field-effect transistor (JFET) based on the MOD heterostructure. This first demonstration of the structural compatibility of the LCI laser with the MODFET is one step toward optoelectronic integration utilizing a common two-dimensional electron gas.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 12 )