Cart (Loading....) | Create Account
Close category search window
 

Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Zah, C.E. ; Bellcore, Red Bank, NJ, USA ; Favire, F.J. ; Bhat, R. ; Menocal, S.G.
more authors

The effect of high-reflection facet coatings on strained-layer multiple-quantum-well lasers was studied and submilliampere-threshold lasers were made in the 1.5- mu m wavelength region with a short cavity and high-reflection-coated facets. As a result of the compressive strain, the threshold current density is loss-limited instead of transparency-limited. By the use of the step-graded-index separate confinement heterostructure to reduce the waveguide loss, a threshold current density of 550 A/cm/sup 2/ was measured on 30- mu m wide broad area lasers with 1-mm long cavity.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 12 )

Date of Publication:

Dec. 1990

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.