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High-power operation in 0.98- mu m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers

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3 Author(s)
Takeshita, T. ; NTT Opto-Electron. Lab., Kanagawa, Japan ; Okayasu, M. ; Uehara, S.

High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9- mu m-wide ridge and 600- mu m-long cavity.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 12 )