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Effect of Temperature and Humidity on \hbox {NO}_{2} and \hbox {NH}_{3} Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

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5 Author(s)
Chang-Hee Kim ; School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Seoul, Korea ; Sung-Won Yoo ; Dong-Woo Nam ; Sunae Seo
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Graphene was used for a sensing part of bottom-gate field-effect transistor (FET)-type gas sensors, and the sensing performance of the sensors was studied. We investigated the effect of temperature (T) and relative humidity on the gas sensitivity of bottom-gate graphene FETs prepared by the inductively coupled plasma chemical vapor deposition method. The conductivity change of graphene exposed to nitrogen oxide (NO2) and ammonia (NH3) was increased with increasing temperature and humidity. For NO2 gas, the graphene FET shows increasing ID with increasing T and also increasing ID with increasing humidity. However, the FET shows an opposite trend with the T and humidity for NH3 gas.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 7 )