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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:7 Help

Effect of Annealing Temperature on \hbox {TiO}_{2} -Based Thin-Film-Transistor Performance

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4 Author(s)
Ni Zhong ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan ; Jun Jun Cao ; Shima, H. ; Akinaga, Hiro

TiOx thin-film transistors (TFTs) are fabricated using SiO2 as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage Vth, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiOx/SiO2 interfacial bonding structure and the TiOx crystallinity is investigated. We suggest that the interfacial modification at the TiOx/SiO2 interface contributes to the significant reduction of Vth due to the breaking of Si-O-Ti bonding. The improvement of the TiOx crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiOx/SiO2 interface structure.

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 7 )

Date of Publication: July 2012

Page(s):
1009 - 1011
ISSN :
0741-3106
INSPEC Accession Number:
12817599
Digital Object Identifier :
10.1109/LED.2012.2193658
Product Type:
Journals & Magazines
Date of Publication :
14 May 2012
Date of Current Version :
22 June 2012
Issue Date :
July 2012
Sponsored by :
IEEE Electron Devices Society

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