By Topic

Low-Power-Driven and Low-Optical-Loss 40-Gb/s Electroabsorption Modulator Using Self-Aligned Two-Step Undercut-Etched Waveguide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tsu-Hsiu Wu ; Department of Photonics and the Institute of Electro-Optical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan ; Jui-Pin Wu ; Yi-Jen Chiu

In this letter, a high-efficiency low-power-driven 40-Gb/s electroabsorption modulator is demonstrated using a new type of waveguide, i.e., self-aligned two-step undercut-etched waveguide (SATSUEW). The low-optical-and-electrical-loss performance can be realized from the smooth side wall, wide ridge, and small core of SATSUEW, enabling high-efficiency high-speed optical modulation. Through a 350-μm-long waveguide, 35-dB extinction ratio and 25-dB/V dc modulation efficiency are observed, while optical insertion loss is kept at -6.5 dB (transmission loss of 1 dB/100 μm). A 40-Gb/s operation using 1-Vpp ac driving power with 13-dB extinction ratio is attained, further verified by 55-GHz electrical-to-optical response. The simulated 40-Gb/s eye diagram using distributive effect exhibits a consistent result with the experiment, suggesting that long SATSUEW can be applied to high-bit-rate and high-efficiency operation and thus relaxing the requirements of material and structure in high-speed optoelectronics.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 7 )